Investigation into microstructural and electrical characteristics of Ni-Cr-Si thin-film resistors deposited in Al2O3 substrate using DC and RF magnetron sputtering

Author

Chen-Su Chiang ; Wen-Hsi Lee ; Jap, Franco

Author_Institution

Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2014

fDate

7-10 May 2014

Firstpage

1

Lastpage

2

Abstract

In this study, the Ni-Cr-Si material of thin film resistor on Al₂O₃ substrate using DC and RF magnetron sputtering techniques are compared. It can be seen that the difference of crystalline structure with various sputtering methods can be observed using X-ray diffraction spectra pattern. The uniform large grain size with low resistance can be obtained by using a high annealing temperature of 450°C. In addition, a stable near-zero temperature coefficient of resistance (8 ppm /°C) can be attained by using RF sputtering with annealing temperature at 400°C.

Keywords

X-ray diffraction; X-ray spectra; alumina; chromium; crystal structure; elemental semiconductors; grain size; nickel; silicon; sputter deposition; thin film resistors; Al₂O₃; DC magnetron sputtering deposition; Ni-Cr-Si; RF magnetron sputtering deposition; X-ray diffraction spectra pattern; crystalline structure; electrical characteristics; high annealing temperature; microstructural characteristics; stable near-zero temperature coefficient of resistance; temperature 400 degC; thin-film resistors; uniform large grain size; Annealing; Magnetic films; Magnetic resonance imaging; Radio frequency; Resistors; Sputtering; Al2O3 substrate; DC magnetron sputtering; Ni-Cr-Si; RF magnetron sputtering; thin-film resistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2014 International Symposium on

Conference_Location

Kwei-Shan

Type

conf

DOI

10.1109/ISNE.2014.6839380

Filename

6839380