A Broadband W-band Subharmonic Mixers Circuit Based on Planar Schottky Diodes

Author

Zhong, Fuqun ; Zhang, Bo ; Fan, Yong ; Zhao, Minghua ; Yang, Xiaofan

Author_Institution

EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2012

Firstpage

792

Lastpage

794

Abstract

A balanced sub-harmonic fix-tuned mixer is designed precisely based on combination of linear/nonlinear circuit simulation. The influence of parasitic parameter on the performance of the mixer is studied by building three dimensional electromagnetic model of antiparallel GaAs Schottky diode. The mixer is realized based on rogers substrate process to minimize the cost and simplify the assembly. The mixer works in the 82-104 GHz band with a simulated conversion loss less than 7.3 dB when pumped with 3.6mW of local oscillator power.

Keywords

III-V semiconductors; Schottky diode mixers; assembling; gallium arsenide; millimetre wave diodes; millimetre wave mixers; millimetre wave oscillators; GaAs; Roger substrate process; antiparallel Schottky diode; assembly; balanced subharmonic fix-tuned mixer; broadband W-band subharmonic mixer circuit; frequency 82 GHz to 104 GHz; linear-nonlinear circuit simulation; local oscillator power; parasitic parameter; planar Schottky diodes; power 3.6 mW; three dimensional electromagnetic model; Industrial control; Planar Schottky diodes; milimter wave communication system Planar Schottky diodes; millimeter wave communication system; sub-harmonic mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Control and Electronics Engineering (ICICEE), 2012 International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-1450-3

Type

conf

DOI

10.1109/ICICEE.2012.211

Filename

6322500