Title :
High-temperature thermal converter based on thin film Ge-Sb-V/TiSi2 thermocouples
Author :
Beensh-Marchwicka, Grazyna ; Prociów, Eugeniusz ; Osadnik, Stanislaw
Author_Institution :
Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol.
Abstract :
In this paper the applicability of magnetron sputtered Ge-Sb-V/TiSi2 thermocouples in thermal converter construction has been analysed and described. Testing device with linear symmetry was prepared on 10times10 mm2 D263 Schott foil glass substrates 7 mum thick. The converter contained the MoSi2 heater and the integrated thermopile based on 2times6 "hot" and "cold" junctions of silicide/semiconductor type. The Ge-Sb-V alloy with various content of V was examined. Thermal sensitivity of thermocouples was varied from 160 to 224 muV/K. The performance of these converters in ambient temperature range of 300-773 K under normal pressure has been evaluated and reported
Keywords :
antimony alloys; germanium alloys; high-temperature techniques; molybdenum compounds; semiconductor device testing; sputtered coatings; thermocouples; thermoelectric conversion; thermopiles; titanium compounds; vanadium alloys; 300 to 773 K; 7 micron; D263 Schott foil glass substrates; GeSbV-TiSi2; MoSi2; high-temperature thermal converter; integrated thermopile; magnetron sputtered thermocouples; silicide-semiconductor type; thermal sensitivity; thin film thermocouples; Glass; Pulsed power supplies; Silicides; Silicon carbide; Sputtering; Substrates; Temperature distribution; Temperature sensors; Thermoelectricity; Transistors;
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005. 28th International Spring Seminar on
Conference_Location :
Wiener Neustadt
Print_ISBN :
0-7803-9325-2
DOI :
10.1109/ISSE.2005.1490997
