Title :
Broadband 110 GHz on-wafer interconnects built in CMOS-compatible membrane technology
Author :
Arz, Uwe ; Rohland, Martina ; Kuhlmann, Karsten ; Büttgenbach, Stephanus
Author_Institution :
Phys.-Tech. Bundesanstalt, Braunschweig, Germany
Abstract :
We present a broadband transition from a contact structure built on highly-conductive silicon to a coplanar waveguide (CPW) fabricated in membrane technology. Test structures were fabricated and measured in a frequency range from 0.1 to 110 GHz. The measured propagation constant of the membrane CPW agrees well with analytical calculations in the entire frequency band.
Keywords :
CMOS integrated circuits; coplanar waveguides; electrical contacts; elemental semiconductors; integrated circuit interconnections; silicon; CMOS-compatible membrane technology; broadband on-wafer interconnects; broadband transition; contact structure; coplanar waveguide fabrication; frequency 0.1 GHz to 110 GHz; frequency 110 GHz; frequency band; highly-conductive silicon; membrane CPW; membrane technology; Calibration; Coplanar waveguides; Frequency measurement; Impedance; Silicon; Substrates; Transmission line measurements; Membrane technology; calibration standard; coplanar waveguide; interconnect; on-wafer measurement; silicon;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
