DocumentCode
1612141
Title
A 150 MHz OTA in 3 macron CMOS silicon technology
Author
Eynde, F. Op´t ; Sansen, W.
Author_Institution
Dept. of Electrotech., Katholieke Univ., Leuven, Heverlee, Belgium
fYear
1989
Firstpage
86
Abstract
The authors explore the possibilities and limitations of the CMOS technology for the implementation of wideband amplifiers. Using a simplified transistor model, several amplifier configurations are compared. It is shown that minor circuit modifications can reduce the power consumption by more than a factor of two. The study results in a 150-MHz operational amplifier in 3-μm CMOS
Keywords
CMOS integrated circuits; high-frequency amplifiers; insulated gate field effect transistors; operational amplifiers; semiconductor device models; wideband amplifiers; 0 to 150 MHz; 150 MHz; 3 micron; CMOS technology; OTA; Si; VHF amplifier; amplifier configurations; circuit modifications; limitations; operational amplifier; power consumption; transistor model; wideband amplifiers; Bipolar transistors; Broadband amplifiers; CMOS technology; Cutoff frequency; Energy consumption; MOSFETs; Operational amplifiers; Power amplifiers; Silicon; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1989., IEEE International Symposium on
Conference_Location
Portland, OR
Type
conf
DOI
10.1109/ISCAS.1989.100298
Filename
100298
Link To Document