Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs

Author

Chan, C.T. ; Kuo, C.H. ; Tang, C.J. ; Chen, M.C. ; Wang, Tahui ; Lu, S. Huang ; Hu, H.C. ; Chen, T.F. ; Yang, C.K. ; Lee, M.T. ; Wu, D.Y. ; Chen, J.K. ; Chien, S.C. ; Sun, S.W.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2004

Firstpage

49

Lastpage

52

Abstract

Accelerated oxide breakdown progression in ultra-thin oxide (1.4 nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.

Keywords

MOSFET; electroluminescence; hot carriers; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; tunnelling; 1.4 nm; accelerated oxide breakdown progression; body potential; breakdown induced channel carrier heating; bulk pMOSFET; carrier temperature; floating-body configuration; hole stress current; hole tunneling current; hot carrier luminescence measurement; ultra-thin oxide SOI pMOSFET; Acceleration; Current measurement; Electric breakdown; Heating; Hot carriers; Luminescence; MOSFETs; Numerical simulation; Stress; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the

Print_ISBN

0-7803-8454-7

Type

conf

DOI

10.1109/IPFA.2004.1345537

Filename

1345537