Geometry dependence of gate oxide breakdown evolution [MOSFET]

Author

Sun, Y. ; Pey, K.L. ; Tung, C.H. ; Lombardo, S. ; Palumbo, F. ; Tang, L.J. ; Radhakrishnan, M.K.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2004

Firstpage

57

Lastpage

60

Abstract

The effects of geometrical arrangement of MOSFETs on breakdown (BD) evolution in ultrathin gate oxide have been studied. Specific attention was paid to the impact of heat confinement in narrow MOSFETs on the BD evolution from soft BD to hard BD. It is found that, based on a numerical simulation, the thermal effect, which is the main driving force of catastrophic BD, is more severe in narrow MOSFETs than wide MOSFETs, which is in agreement with the degradation rate measured from their respective BD transients.

Keywords

MOSFET; dielectric thin films; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; thermal analysis; MOSFET breakdown geometry dependence; breakdown transients; catastrophic breakdown; degradation rate; gate oxide breakdown evolution; gate oxide reliability; hard breakdown; narrow MOSFET heat confinement; soft breakdown; thermal effects; ultrathin gate oxide; wide MOSFET; Bandwidth; Degradation; Electric breakdown; Force measurement; Geometry; MOSFETs; Microelectronics; Numerical simulation; Sun; Thermal force;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the

Print_ISBN

0-7803-8454-7

Type

conf

DOI

10.1109/IPFA.2004.1345539

Filename

1345539