The leakage current study on Cu/TaSi/sub x//porous silica damascene structures

Author

Chung-Hsien Chen ; Fon-Shan Huang

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2004

Firstpage

65

Lastpage

68

Abstract

Ta-based diffusion barriers, nano-cluster TaSi/sub 0.55/, polycrystalline TaSi/sub 0.42/ and TaN, were used for the application of the Cu/porous silica damascene integration. The leakage current, bias-temperature-stress measurements, atomic force microscope, and Auger electron mapping were then investigated. The samples with nano-cluster TaSi/sub 0.55/ showed the best performance among these samples.

Keywords

Auger electron spectroscopy; atomic force microscopy; copper; dielectric thin films; diffusion barriers; integrated circuit metallisation; leakage currents; nanostructured materials; porous materials; silicon compounds; tantalum compounds; Auger electron mapping; Cu-TaN-SiO/sub 2/; Cu-TaSi-SiO/sub 2/; atomic force microscope mapping; bias-temperature-stress; copper/porous silica damascene integration; diffusion barriers; leakage currents; low-dielectric-constant materials; low-k dielectrics; nanoclusters; polycrystalline structures; porous silica damascene structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the

Conference_Location

Taiwan

Print_ISBN

0-7803-8454-7

Type

conf

DOI

10.1109/IPFA.2004.1345541

Filename

1345541