Title :
The leakage current study on Cu/TaSix/porous silica damascene structures
Author :
Chen, Chung-Hsien ; Huang, Fon-Shan
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
Ta-based diffusion barriers, nano-cluster TaSi0.55, polycrystalline TaSi0.42 and TaN, were used for the application of the Cu/porous silica damascene integration. The leakage current, bias-temperature-stress measurements, atomic force microscope, and Auger electron mapping were then investigated. The samples with nano-cluster TaSi0.55 showed the best performance among these samples.
Keywords :
Auger electron spectroscopy; atomic force microscopy; copper; dielectric thin films; diffusion barriers; integrated circuit metallisation; leakage currents; nanostructured materials; porous materials; silicon compounds; tantalum compounds; Auger electron mapping; Cu-TaN-SiO2; Cu-TaSi-SiO2; atomic force microscope mapping; bias-temperature-stress; copper/porous silica damascene integration; diffusion barriers; leakage currents; low-dielectric-constant materials; low-k dielectrics; nanoclusters; polycrystalline structures; porous silica damascene structures; Atomic force microscopy; Atomic measurements; Current measurement; Displays; Force measurement; Leakage current; Plasma measurements; Plasma temperature; Silicon compounds; Surface cleaning;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345543
