Analysis of transient radiation effects in III–V compound high electron mobility transistors using mixed-mode 3D simulations

The paper presents details of our physics-based three-dimensional (3D) device modeling coupled in mixed-mode with external load circuit and parasitics, which enabled accurate simulation of single-event effects (SEEs) in III-V compound high electron mobility transistors (HEMTs). We show the importance of correct device physics models, such as Schottky barriers and tunneling, as well as effects of parasitics modeling, for correct computation of both steady-state and transient characteristics of III-V HEMTs. Mixed-mode coupling of a realistic load circuit, including experimental parasitics, with the 3D TCAD device model, is critical to be able to compute single-event transient current waveforms and charge collection characteristics that reflect well experimental results.