Title :
Novel and robust silicon controlled rectifier (SCR) based devices for on-chip ESD protection
Author :
Salcedo, J.A. ; Liou, J.J. ; Bernier, J.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
Silicon controlled rectifiers (SCRs) are frequently used to build on-chip electrostatic discharge (ESD) structures, but SCRs are not sufficiently robust to meet a wide range of ESD requirements in various integrated circuits. In this paper, a novel and robust SCR-based device called the HHLVTSCR is presented. It is demonstrated that the HHLVTSCR can exhibit various characteristics useful for ESD solutions by the adjustment of the channel types (N or P type), terminal connections, or lateral dimensions in the HHLVTSCR. Examples are also included to illustrate how HHVLTSCRs can be used to provide ESD protection in two different IC applications.
Keywords :
electrostatic discharge; integrated circuit design; thyristors; HHLVTSCR channel types; HHLVTSCR lateral dimensions; HHLVTSCR terminal connections; SCR based devices; electrostatic discharge structures; on-chip ESD protection; silicon controlled rectifiers; Bidirectional control; Circuits; Clamps; Electrostatic discharge; Electrostatic interference; Protection; Robust control; Semiconductor diodes; Thyristors; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345548