Title :
Magnetic nanostructure hysteresis loop calculation for modified thin film multi-layer by ion irradiation
Author :
Bajalan, D. ; Hauser, H. ; Fulmek, P.L.
Author_Institution :
Inst. of Sensor & Actuator Syst., Vienna Univ. of Technol.
Abstract :
The fluence of ion irradiation on paramagnetic, polycrystalline thin films affects both anisotropy and spontaneous magnetization Ms . The dependence of coercivity and initial susceptibility on Ms is predicted by a hysteresis model considering the balance of energy with good qualitative agreement. The calculated bit stability, determined by the anisotropy constant, may be promising for future data storage applications
Keywords :
coercive force; ion beam effects; magnetic anisotropy; magnetic hysteresis; magnetic multilayers; magnetic thin films; nanostructured materials; paramagnetic materials; coercivity; ion irradiation effects; magnetic anisotropy; magnetic hysteresis modeling; magnetic nanostructure hysteresis loop calculation; magnetic thin films; modified thin film multi-layers; paramagnetic polycrystalline thin films; spontaneous magnetization; Anisotropic magnetoresistance; Coercive force; Magnetic anisotropy; Magnetic films; Magnetic hysteresis; Magnetization; Paramagnetic materials; Perpendicular magnetic anisotropy; Predictive models; Transistors;
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005. 28th International Spring Seminar on
Conference_Location :
Wiener Neustadt
Print_ISBN :
0-7803-9325-2
DOI :
10.1109/ISSE.2005.1491018
