Title :
1.55 μm photoconductive THz emitters based on ErAs:In0.53Ga0.47As superlattices
Author :
Zhao, Z.-Y. ; Schwagmann, A. ; Ospald, F. ; von Klitzing, K. ; Smet, J.H. ; Driscoll, D.C. ; Hanson, M.P. ; Lu, H. ; Gossard, A.C.
Author_Institution :
Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany
Abstract :
ErAs:In0.53Ga0.47As superlattice THz emitters are fabricated and characterized at an excitation wavelength of 1.55 μm. Photocurrent-voltage characteristics, carrier lifetimes and bandwidth of the THz output are discussed as a function of the superlattice period.
Keywords :
III-V semiconductors; carrier lifetime; erbium compounds; gallium arsenide; indium compounds; optical pulse generation; photoconducting devices; semiconductor superlattices; submillimetre wave lasers; ErAs:InGaAs; carrier lifetime; photoconductive terahertz emitters; photocurrent-voltage characteristic; superlattice terahertz emitters; wavelength 1.55 μm; Bandwidth; Charge carrier lifetime; Conductivity; Fiber lasers; Free electron lasers; Photoconducting materials; Photoconductivity; Superlattices; Surface emitting lasers; Voltage; ErAs nanoisland; InGaAs; telecommunication wavelength; terahertz emitter;
Conference_Titel :
Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE
Conference_Location :
Majorca
Print_ISBN :
978-1-4244-5240-8
Electronic_ISBN :
978-1-4244-5241-5
DOI :
10.1109/PHOTWTM.2010.5421971
