A low-voltage MOSFET with small on-resistance: an extended characterization in high-efficiency power converter applications

The paper deals with a new concept applied in designing low-voltage power MOSFETs, which are suitable for high-current low-voltage converter applications, The layout of the proposed device family overcomes the traditional cell structure by a new strip-based geometry. The authors present interesting characteristics due to the advanced design rules typical of VLSI processes and strong reduction of the on state resistance. Further, the technology process allows a significant simplification of the silicon fabrication steps, thus allowing enhancing of the device ruggedness. The high current handling in switching conditions (up to 150 A) with a breakdown voltage in the range between 20-50 V in a convenient package solutions allow to give the correct answers to the low-voltage range switch applications. The paper starts with the description of the main technology issues in comparison with that of standard devices, particularly focusing on the innovations and the improved performances. Moreover a detailed characterization of the MOSFET behavior in traditional test circuit as well as in an actual AC motor drive for wheelchair applications is presented and discussed.