A new lossy ELIN integrator implementation by unbalancing the bias currents of a “sinh” ideal ELIN integrator

In this paper, a new method for implementing a ldquosinhrdquo lossy ELIN integrator, using a ldquosinhrdquo ideal ELIN integrator, is presented. The proposed ldquosinhrdquo lossy ELIN integrator is based on a variable mapping in the state equations which describe the operation of an ideal integrator and by unbalancing the bias currents of the ldquosinhrdquo nonlinear transconductor. The simulations performed in 0.8 mum BiCMOS technology confirm the theoretical results and a layout of the proposed structure is presented.