Mechanism for slow programming in advanced low-voltage, high-speed ferroelectric memory

Author

Lai, S.C. ; Tsai, C.W. ; Yen, C.T. ; Liu, C.L. ; Lee, S.Y. ; Lien, H.M. ; Lung, S.L. ; Chien, C.H. ; Wu, T.B. ; Wang, Tahui ; Liu, Rich ; Lu, C.Y.

Author_Institution

Macronix Int. Co. Ltd., Taiwan

fYear

2004

Firstpage

123

Lastpage

126

Abstract

Polarization charge loss in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The polarization loss worsens significantly at low operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issues for advanced ferroelectric memory, particularly at low-voltage application. This polarization loss is attributed to slowing-down of polarization switching caused by band bending from Schottky potential at the electrode/ferroelectric interface. A solution to eliminate the polarization loss is proposed and verified.

Keywords

PLD programming; Schottky effect; dielectric losses; dielectric polarisation; ferroelectric storage; ferroelectric switching; ferroelectric thin films; high-speed integrated circuits; integrated circuit reliability; integrated memory circuits; lead compounds; low-power electronics; metal-insulator boundaries; microprogramming; random-access storage; FeRAM; PZT; PZT ferroelectric memory; PbZrO3TiO3; Schottky potential; band bending; electrode/ferroelectric interface; ferroelectric random access memory; low-voltage application; low-voltage high-speed ferroelectric memory; polarization charge loss; polarization loss; polarization switching slow-down; reliability issue; sensing margin; slow programming mechanism; Capacitors; Electrodes; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Pulse measurements; Random access memory; Space vector pulse width modulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the

Print_ISBN

0-7803-8454-7

Type

conf

DOI

10.1109/IPFA.2004.1345565

Filename

1345565