Low power integrated 0.35 μm CMOS voltage-mode DC-DC boost converter

Author

Gendensuren, Munkhsuld ; Jung-Woong Park ; Chan-Soo Lee ; Nam-Soo Kim

Author_Institution

Sch. of Electr. & Comput. Eng., Chungbuk Nat. Univ., Cheong-Ju, South Korea

fYear

2013

Firstpage

502

Lastpage

505

Abstract

This paper presents an integrated monolithic voltage-mode DC-DC boost converter with low-power control circuit. With the integration of both power switches and control circuit within same CMOS technology, the DC-DC boost converter offers a low-power operation with a small chip-size. The amplifier, oscillator, and comparator in the control circuit are designed with the supply voltage of 3.3V and the operating frequency of 5.5 MHz. The compensator circuit exploits a pole compensation for a stable operation. The DC-DC boost converter is measured in both experiment and simulation. The test in 0.35 μm CMOS process shows that the output transient time of the amplifier is controlled within 7 μsec and the output-voltage is accurately controlled with the ripple ratio of 3%.

Keywords

CMOS integrated circuits; DC-DC power convertors; amplifiers; low-power electronics; power integrated circuits; power semiconductor switches; amplifier; comparator; compensator circuit; frequency 5.5 MHz; low power integrated CMOS voltage-mode DC-DC boost converter; low-power control circuit; oscillator; pole compensation; power switches; ripple ratio; size 0.35 mum; small chip-size; voltage 3.3 V; CMOS integrated circuits; CMOS technology; Driver circuits; Inductors; Operational amplifiers; Power engineering; Voltage control; CMOS; boost converter; control circuit; integration; voltage-mode;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Engineering, Energy and Electrical Drives (POWERENG), 2013 Fourth International Conference on

Conference_Location

Istanbul

ISSN

2155-5516

Type

conf

DOI

10.1109/PowerEng.2013.6635659

Filename

6635659