• DocumentCode
    1612965
  • Title

    Isolation issues in smart power integrated circuits

  • Author

    Charitat, G.

  • Author_Institution
    Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
  • Volume
    1
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    15
  • Abstract
    This paper analyses a major problem inherent to smart power integrated circuits employed with inductive loads, i.e. the rejection of carriers inside the substrate during switching off. Firstly, the physical mechanisms involved are presented as well as some solutions to minimize the perturbations inside the common substrate of the integrated circuit. Secondly, use of dielectrically isolated substrate to avoid the problem is critically assessed and leads to the conclusion that DI is not a perfect solution regarding the thermal dissipation and the switching speed.
  • Keywords
    isolation technology; leakage currents; minority carriers; power integrated circuits; DI; carrier rejection; dielectrically isolated substrate; inductive loads; perturbations; physical mechanisms; smart power integrated circuits; switching speed; thermal dissipation; Dielectric devices; Dielectric substrates; Diodes; Integrated circuit technology; Isolation technology; Leakage current; Low voltage; Microelectronics; Power integrated circuits; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2002. MIEL 2002. 23rd International Conference on
  • Print_ISBN
    0-7803-7235-2
  • Type

    conf

  • DOI
    10.1109/MIEL.2002.1003143
  • Filename
    1003143