SiC device technology for high voltage and RF power applications

Author

Östling, M. ; Koo, S.M. ; Lee, S.-K. ; Danielsson, E. ; Domeij, M. ; Zetterling, C.-M.

Author_Institution

Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

31

Abstract

Recently, silicon carbide (SiC) has drawn considerable attention as a suitable semiconductor material for high power, high frequency, high temperature and radiation resistant devices. The commercialized substrates and the experimental device prototypes in SiC show the promises while the continued improvements in fabrication techniques are required for economically viable productions to be widespread. This paper reviews the progress and current issues in SiC device process technology and the state-of-the art SiC devices for high voltage and RF power applications.

Keywords

UHF transistors; high-temperature electronics; microwave power transistors; radiation hardening (electronics); silicon compounds; wide band gap semiconductors; RF power applications; SiC; fabrication techniques; high temperature devices; high voltage applications; radiation resistant devices; wide band gap semiconductors; Commercialization; Fabrication; Power generation economics; Prototypes; Radio frequency; Semiconductor materials; Silicon carbide; Substrates; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003145

Filename

1003145