Title :
Stress analysis of a full bridge ZVS DC-DC converter
Author :
Abedinpour, S. ; Burra, R. ; Shenai, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
This paper presents the MOSFET electrical stresses in a full bridge (FB) ZVS DC-DC converter with a detailed study of the MOSFET body diode reverse recovery stress under normal and low load operating conditions. Experimental results are presented under normal and low load operation for a 350 V-3.5 V, 225 A FB ZVS DC-DC converter. Two-dimensional (2-D) numerical simulation results of internal dynamics of the device during switching prove that the MOSFET body diode reverse recovery under no load conditions is stressful as opposed to the reverse recovery under normal operating condition. A test circuit is also designed to characterize the body diode reverse recovery performance. A detailed failure analysis for the MOSFETs failed in the reverse recovery test circuit under high stress conditions is also presented.
Keywords :
DC-DC power convertors; bridge circuits; field effect transistor switches; power MOSFET; power semiconductor switches; stress analysis; switching circuits; 2-D numerical simulation; 225 A; 3.5 V; 350 V; MOSFET body diode reverse recovery; MOSFET body diode reverse recovery stress; MOSFET electrical stresses; failure analysis; full bridge ZVS DC-DC converter; high stress conditions; internal dynamics; low load operating conditions; no load conditions; normal operating condition; normal operating conditions; stress analysis; two-dimensional numerical simulation; Bridge circuits; Circuit testing; DC-DC power converters; Diodes; Failure analysis; MOSFET circuits; Numerical simulation; Stress; Two dimensional displays; Zero voltage switching;
Conference_Titel :
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE
Conference_Location :
Chicago, IL, USA
Print_ISBN :
0-7803-7114-3
DOI :
10.1109/IAS.2001.955491
