Title :
Hot carrier reliability of HfSiON PMOSFETs with TiN gate
Author :
Sim, J.H. ; Lee, B.H. ; Choi, R. ; Matthews, K. ; Zeitzoff, P. ; Bersuker, G.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
Study of the hot carrier (HC) stress of short channel PMOSFETs with the HfSiON gate dielectric and TiN gate electrodes demonstrated greater degradation of high-k/metal gate vs. SiO2/poly devices. Transient charging at the drain corner of HfSiON layer is proposed to explain the near-absence of the well-defined peak in the substrate current dependence on gate voltage, which is characteristic to SiO2 dielectrics.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; electrodes; hafnium compounds; hot carriers; semiconductor device measurement; semiconductor device metallisation; silicon compounds; titanium compounds; HfSiON PMOSFET; HfSiON gate dielectric; SiO2; SiO2/poly devices; TiN gate electrodes; TiN-HfSiON; drain corner transient charging; high-k/metal gate degradation; hot carrier reliability; hot carrier stress; short channel PMOSFET; substrate current gate voltage dependence; Degradation; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; Hot carriers; MOSFETs; Stress; Tin; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345576
