Hot carrier reliability of HfSiON PMOSFETs with TiN gate

Author

Sim, J.H. ; Lee, B.H. ; Choi, R. ; Matthews, K. ; Zeitzoff, P. ; Bersuker, G.

Author_Institution

Texas Univ., Austin, TX, USA

fYear

2004

Firstpage

157

Lastpage

160

Abstract

Study of the hot carrier (HC) stress of short channel PMOSFETs with the HfSiON gate dielectric and TiN gate electrodes demonstrated greater degradation of high-k/metal gate vs. SiO₂/poly devices. Transient charging at the drain corner of HfSiON layer is proposed to explain the near-absence of the well-defined peak in the substrate current dependence on gate voltage, which is characteristic to SiO₂ dielectrics.

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; electrodes; hafnium compounds; hot carriers; semiconductor device measurement; semiconductor device metallisation; silicon compounds; titanium compounds; HfSiON PMOSFET; HfSiON gate dielectric; SiO₂; SiO₂/poly devices; TiN gate electrodes; TiN-HfSiON; drain corner transient charging; high-k/metal gate degradation; hot carrier reliability; hot carrier stress; short channel PMOSFET; substrate current gate voltage dependence; Degradation; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; Hot carriers; MOSFETs; Stress; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the

Print_ISBN

0-7803-8454-7

Type

conf

DOI

10.1109/IPFA.2004.1345576

Filename

1345576