• DocumentCode
    1613229
  • Title

    Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation

  • Author

    Yu, C.-Y. ; Chen, T.C. ; Lee, M.H. ; Huang, S.-H. ; Lee, L.S. ; Liu, C.W.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2004
  • Firstpage
    165
  • Lastpage
    168
  • Abstract
    The electrical and optical reliability characteristics of a Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of the Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices.
  • Keywords
    annealing; deuterium; dielectric thin films; hafnium compounds; hydrogen; platinum; semiconductor device reliability; D2; H2; Pt-HfO2; deuterium incorporation treatment; electrical reliability; gate dielectrics; gate stack devices; hydrogen incorporation; optical reliability; oxide thickness scaling; post-metallization annealing; Annealing; CMOS technology; Capacitors; Deuterium; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hydrogen; Optical films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
  • Print_ISBN
    0-7803-8454-7
  • Type

    conf

  • DOI
    10.1109/IPFA.2004.1345578
  • Filename
    1345578
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1613229