Field effect transistors-from silicon MOSFETs to carbon nanotube FETs

Author

Wong, H. S Philip

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

103

Abstract

As CMOS devices scale into the nanometer regime, the material set and device structures employed by conventional FET are beginning to reach their limits. In this paper, device and technology features of CMOS at the nanometer regime are examined. This includes new devices formed by different device structures such as the double-gate FET and back-gate FET, as well as devices made of new materials such as silicon germanium and combinations of new materials such as high-dielectric constant gate dielectrics and metal gate electrodes. Device and materials possibilities beyond silicon CMOS are discussed.

Keywords

CMOS integrated circuits; carbon nanotubes; dielectric thin films; field effect transistors; insulated gate field effect transistors; integrated circuit technology; nanotechnology; permittivity; semiconductor device manufacture; C; CMOS device scaling; Si; SiGe; back-gate FET; carbon nanotube FET; device structures; double-gate FET; field effect transistors; high-dielectric constant gate dielectrics; material set; metal gate electrodes; nanometer regime; silicon CMOS; silicon MOSFET; silicon germanium; CMOS technology; Dielectric devices; Dielectric materials; Double-gate FETs; Germanium silicon alloys; Inorganic materials; MOSFETs; Nanoscale devices; Nanostructured materials; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003155

Filename

1003155