Effect of current crowding on copper dual damascene via bottom failure for ULSI applications

Author

Arijit, R. ; Tan, C.M. ; Anand, V.V. ; Ahila, K. ; Zhang, G. ; Subodh, M.G.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2004

Firstpage

173

Lastpage

176

Abstract

Reliability issues are becoming more important in interconnect via. Electromigration experiments are performed on line/via structures in a two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Semi-classical width dependence Black´s equation together with finite element analysis revealed that the difference in the time to failure is due to the much larger average current density along the heterogeneous interface for the wide line/via structure, and good agreement is obtained between the simulation and experimental results.

Keywords

ULSI; copper; current density; electromigration; finite element analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; Black´s equation; Cu; FEA; ULSI feature size reduction; current crowding effects; dual damascene interconnection system; electromigration induced failure; finite element analysis; heterogeneous interface average current density; interconnect reliability; narrow line/via structures; time to failure; via bottom failure; wide line/via structures; Artificial intelligence; Copper; Current density; Electromigration; Finite element methods; Metallization; Microelectronics; Proximity effect; Reliability engineering; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the

Print_ISBN

0-7803-8454-7

Type

conf

DOI

10.1109/IPFA.2004.1345582

Filename

1345582