DocumentCode
1613452
Title
H+ irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications
Author
Cova, P. ; Menozzi, R. ; Portesine, M.
Author_Institution
Dept. of Inf. Technol., Parma Univ., Italy
Volume
1
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
143
Abstract
We describe a coupled experimental-numerical study of the effect of proton irradiation on the inductive turn-off of fast-recovery p-i-n diodes for snubberless applications. The goal is to avoid the large overvoltages and spurious oscillations that may arise at switch-off and jeopardize the diode´s reliability. We evaluated different proton irradiation profiles in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.
Keywords
overvoltage protection; p-i-n diodes; power semiconductor diodes; proton effects; semiconductor device reliability; H+ irradiation; inductive turn-off; oscillation damping; overvoltages; power p-i-n diodes; proton irradiation; proton irradiation profiles; reliability; reverse recovery softness; snubberless applications; spurious oscillations; switch-off; switching speed; Charge carrier lifetime; Circuits; P-i-n diodes; Power electronics; Power semiconductor switches; Protons; Semiconductor diodes; Snubbers; Surges; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN
0-7803-7235-2
Type
conf
DOI
10.1109/MIEL.2002.1003160
Filename
1003160
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