Title :
H+ irradiation for reverse recovery softness and reliability of power p-i-n diodes for snubberless applications
Author :
Cova, P. ; Menozzi, R. ; Portesine, M.
Author_Institution :
Dept. of Inf. Technol., Parma Univ., Italy
fDate :
6/24/1905 12:00:00 AM
Abstract :
We describe a coupled experimental-numerical study of the effect of proton irradiation on the inductive turn-off of fast-recovery p-i-n diodes for snubberless applications. The goal is to avoid the large overvoltages and spurious oscillations that may arise at switch-off and jeopardize the diode´s reliability. We evaluated different proton irradiation profiles in order to extract indications on the optimum trade-off among switching speed, recovery softness, overvoltage and spurious oscillation damping.
Keywords :
overvoltage protection; p-i-n diodes; power semiconductor diodes; proton effects; semiconductor device reliability; H+ irradiation; inductive turn-off; oscillation damping; overvoltages; power p-i-n diodes; proton irradiation; proton irradiation profiles; reliability; reverse recovery softness; snubberless applications; spurious oscillations; switch-off; switching speed; Charge carrier lifetime; Circuits; P-i-n diodes; Power electronics; Power semiconductor switches; Protons; Semiconductor diodes; Snubbers; Surges; Voltage;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003160
