Electrical properties of field grading materials influenced by the silicon carbide grain size

Author

Önneby, Carina ; Mårtensson, Eva ; Gafvert, U. ; Gustafsson, Anders ; Palmqvist, Lars

Author_Institution

ABB Corp. Res., Vasteras, Sweden

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

43

Lastpage

45

Abstract

Non-linear field-grading materials are used to avoid stress concentrations in many AC and DC high voltage applications. One way to obtain materials having the desired non-linear characteristics is to use compounds, such as an insulating polymer with a semiconducting filler. A possible filler is silicon carbide (SiC). In this study ethylene-propylene rubber (EPDM) mixtures containing a wide range of SiC particle sizes, from approximately 0.7 to 23 μm, have been used to evaluate variations in resistivity, permittivity and nonlinearity. The material properties have been electrically characterized and analyzed both at low voltage in frequency domain and at high voltage in time domain

Keywords

electrical resistivity; ethylene-propylene rubber; filled polymers; grain size; particle size; permittivity; semiconductor materials; silicon compounds; SiC; electrical properties; ethylene-propylene rubber; field grading material; insulating polymer; nonlinear characteristics; particle size; permittivity; resistivity; semiconducting filler; silicon carbide grain size; Conductivity; Permittivity; Plastic insulation; Polymers; Rubber; Semiconductivity; Semiconductor materials; Silicon carbide; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid Dielectrics, 2001. ICSD '01. Proceedings of the 2001 IEEE 7th International Conference on

Conference_Location

Eindhoven

Print_ISBN

0-7803-6352-3

Type

conf

DOI

10.1109/ICSD.2001.955507

Filename

955507