Title :
Noise behavior of elementary transconductors stages in bipolar and CMOS technology
Author :
Cehan, Vlad ; Bozomitu, Radu Gabriel ; Ionescu, Daniela
Author_Institution :
Dept. of Telecommun., "Gh. Asachi" Tech. Univ., Iasi, Romania
Abstract :
In this paper a comparative analysis of the noise behavior of two topologies of elementary transconductor stages (with differential pair and with second generation current conveyor - CCII) in bipolar and CMOS technology is presented. This study is made by a theoretical calculation of the signal to noise ratio (SNR) for each considered configuration, and also by a 0.8 mum BiCMOS technology simulations; SNR is a very important criterion for noise behavior assessment of a circuit. The paper shows that a CCII stages transconductor has a better noise behavior than a differential pair one, for the same values of circuits transconductances, independent of the technology used (bipolar or CMOS).
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; bipolar integrated circuits; current conveyors; integrated circuit noise; 0.8 micron; BiCMOS technology; CMOS technology; bipolar technology; circuits transconductances; comparative analysis; differential pair transconductor; elementary transconductors stages; noise behavior; second generation current conveyor; signal to noise ratio; Active noise reduction; CMOS technology; Circuit noise; Frequency; Noise generators; Semiconductor device modeling; Signal to noise ratio; Transconductance; Transconductors; Voltage;
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005. 28th International Spring Seminar on
Conference_Location :
Wiener Neustadt
Print_ISBN :
0-7803-9325-2
DOI :
10.1109/ISSE.2005.1491053
