Title :
Thermal model of power semiconductor devices for electro-thermal circuit simulations
Author :
Igic, P.M. ; Mawby, P.A. ; Towers, M.S. ; Batcup, S.
Author_Institution :
Power Electron. Design Centre, Univ. Coll. of Swansea, UK
fDate :
6/24/1905 12:00:00 AM
Abstract :
An electro-thermal (ET) strategy used for ET circuit simulations is described in this paper. An original program for a MATLAB environment based on a deconvolution method is written and used for a determination of the RC dynamic thermal network parameters. An excellent agreement is obtained between experimental thermal transient response function of the device for a step function excitation and simulated one obtained using corresponding RC thermal network.
Keywords :
circuit simulation; deconvolution; power semiconductor devices; semiconductor device models; thermal analysis; transient response; ET circuit simulations; MATLAB environment; RC dynamic thermal network; deconvolution method; electro-thermal strategy; power semiconductor devices; step function excitation; thermal model; thermal network parameters; thermal transient response function; Circuit simulation; Computational modeling; Deconvolution; Electronic packaging thermal management; Equations; MOSFET circuits; Mathematical model; Power semiconductor devices; Temperature; Transient response;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003167
