Thermal model of power semiconductor devices for electro-thermal circuit simulations

Author

Igic, P.M. ; Mawby, P.A. ; Towers, M.S. ; Batcup, S.

Author_Institution

Power Electron. Design Centre, Univ. Coll. of Swansea, UK

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

171

Abstract

An electro-thermal (ET) strategy used for ET circuit simulations is described in this paper. An original program for a MATLAB environment based on a deconvolution method is written and used for a determination of the RC dynamic thermal network parameters. An excellent agreement is obtained between experimental thermal transient response function of the device for a step function excitation and simulated one obtained using corresponding RC thermal network.

Keywords

circuit simulation; deconvolution; power semiconductor devices; semiconductor device models; thermal analysis; transient response; ET circuit simulations; MATLAB environment; RC dynamic thermal network; deconvolution method; electro-thermal strategy; power semiconductor devices; step function excitation; thermal model; thermal network parameters; thermal transient response function; Circuit simulation; Computational modeling; Deconvolution; Electronic packaging thermal management; Equations; MOSFET circuits; Mathematical model; Power semiconductor devices; Temperature; Transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003167

Filename

1003167