Excess carrier density and forward voltage drop in trench insulated gate bipolar transistor (TIGBT)

Author

Kim, Hyoung-Woo ; Kim, Min-Su ; Choi, Yearn-Ik ; Chung, Sang-Koo

Author_Institution

Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea

Volume

1

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

185

Abstract

Decrease in the forward voltage drop due to the enhanced carrier density at the cathode side of the trench insulated gate transistor (TIGBT) is studied as a function of the aspect ratio between the accumulation layer and cell size as well as the applied gate voltage and compared with those for the planar DMOS-IGBT. Based on analytical expressions for hole density distribution in the lateral and vertical directions in the proximity of the reverse biased cathode junction, the current gain for the pnp transistor action is determined. The analytical results show a fair agreement with the numerical simulations using MEDICI.

Keywords

accumulation layers; cathodes; electric potential; hole density; insulated gate bipolar transistors; isolation technology; numerical analysis; power bipolar transistors; semiconductor device models; MEDICI numerical simulations; TIGBT; accumulation layer; applied gate voltage; aspect ratio; carrier density; cell size; current gain; forward voltage drop; hole density distribution; planar DMOS-IGBT; pnp transistor action; reverse biased cathode junction; trench insulated gate bipolar transistor; Cathodes; Charge carrier density; Charge carrier processes; Current density; Insulated gate bipolar transistors; Insulation; Medical simulation; Numerical simulation; Predictive models; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2002. MIEL 2002. 23rd International Conference on

Print_ISBN

0-7803-7235-2

Type

conf

DOI

10.1109/MIEL.2002.1003170

Filename

1003170