Title :
Improved trench MOS barrier Schottky (TMBS) rectifier
Author :
Moon, Jin-Woo ; Choi, Yearn-Ik ; Chung, Sang-Koo
Author_Institution :
Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea
fDate :
6/24/1905 12:00:00 AM
Abstract :
An improved trench MOS barrier Schottky (TMBS) rectifier is proposed which utilizes the upper half of the trench sidewall as an active area. The proposed structure improves the forward voltage drop by 20% in comparison with the conventional one without degradation in breakdown voltage. The reverse leakage current is also increased by several times. An analytical model for the field distribution is given to explain the increase of the leakage current and compared with two-dimensional numerical simulations.
Keywords :
MIS structures; Schottky barriers; Schottky diodes; electric fields; isolation technology; leakage currents; numerical analysis; semiconductor device breakdown; semiconductor device models; solid-state rectifiers; 2D numerical simulations; TMBS rectifier; breakdown voltage degradation; field distribution analytical model; forward voltage drop; reverse leakage current; trench MOS barrier Schottky rectifier; upper trench sidewall active area; Breakdown voltage; Degradation; Doping; Epitaxial layers; Insulated gate bipolar transistors; Leakage current; Low voltage; Moon; Numerical simulation; Rectifiers;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003171
