DocumentCode :
1613759
Title :
Effect of electrode on charge transfer phenomena of charge transport material
Author :
Hashimoto, Y. ; Suzuki, K. ; Matsuda, H. ; Akagi, M. ; Sakakibara, T. ; Hamagaki, M. ; Maeta, S.
Author_Institution :
Canon Inc., Tokyo, Japan
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
77
Lastpage :
80
Abstract :
It is shown that the interface charge transfer between the charge transport layer (CTL) and anode is affected by the work function of the anode metal. The charge transfer of the CTL/anode interface under low electric field is greatly influenced by a difference of injection barrier between the localized energy state of the CTL and the work function of the anode. From the results of dark current measurements under high electric field, we conclude the cause to be the transfer of electrons between the HOMO level of the CTL and the valence band of the anode metal. On the other hand, the photothreshold energies for the specimens with anodes of different work function are not affected by electric field. These experimental findings suggest that surface states do not exist on the CTL-3. Moreover, as the LUMO level of the CTL-3 is about 2.7 eV, the photothreshold energy should correspond to the LUMO level of the CTL-3. We conclude that the CTL has two electronic energy levels and that surface states do not exist
Keywords :
charge injection; interface states; organic semiconductors; photoconductivity; semiconductor thin films; work function; HOMO level; LUMO level; anode metal; charge transfer phenomena; dark current; electrode effect; electronic energy levels; hole injection; injection barrier; interface charge transfer; ionization potential; localized energy state; organic charge transport material; photocurrent; photothreshold energies; valence band; work function; Amorphous materials; Charge measurement; Charge transfer; Current measurement; Electric variables measurement; Electrodes; Photoconductivity; Positron emission tomography; Pulse measurements; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid Dielectrics, 2001. ICSD '01. Proceedings of the 2001 IEEE 7th International Conference on
Conference_Location :
Eindhoven
Print_ISBN :
0-7803-6352-3
Type :
conf
DOI :
10.1109/ICSD.2001.955517
Filename :
955517
Link To Document :
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