DocumentCode :
1613814
Title :
Evaluating RF ESD protection design: An overview
Author :
Chen, Guang ; Wang, Albert
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
fYear :
2004
Firstpage :
205
Lastpage :
208
Abstract :
ESD (electrostatic discharge) protection design for RF ICs is a challenging design problem, for which one critical aspect is to properly characterize RF ESD protection designs. This paper presents an overview of RF ESD protection structure evaluation techniques including ESD zapping test, TLP (transmission line pulse) test and S-parameter measurement. Characterization results of typical ESD protection structures are discussed, based on which suitable RF ESD protection structures are suggested.
Keywords :
S-parameters; electrostatic discharge; integrated circuit design; integrated circuit reliability; integrated circuit testing; protection; radiofrequency integrated circuits; transmission line theory; ESD protection structure evaluation techniques; ESD protection structures; ESD zapping test; RF ESD protection design; RF IC; S-parameter measurement; TLP test; electrostatic discharge; transmission line pulse test; Circuit synthesis; Circuit testing; Electrostatic discharge; MOSFET circuits; Parasitic capacitance; Protection; Pulse measurements; Radio frequency; Radiofrequency integrated circuits; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
Type :
conf
DOI :
10.1109/IPFA.2004.1345597
Filename :
1345597
Link To Document :
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