Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices

The relations between human-body-model (HBM) electrostatic discharge (ESD) waveform and transmission line pulsing (TLP) I-V curve on low temperature poly-Si (LTPS) thin film transistor (TFT) have been investigated in this paper. By using ESD zapper and TLP system, the ESD waveforms and TLP I-V curves on the LPTS TFT devices under different device dimensions have been measured. From the experimental results, the turn-on resistances of TFT devices during HBM zapping and TLP stress are almost the same. Such experimental results have shown a good correlation between HBM ESD level and TLP measurement on LTPS TFT devices.