Title :
Quantum well intermixing for optoelectronic device integration
Author :
Buda, M. ; Deenapanray, P.N.K. ; Fu, L. ; Tan, H.H. ; Reece, P. ; Dao, L.V. ; Gal, M. ; Jagadish, C.
Author_Institution :
Res. Sch. of Phys. Sci. & Eng., Australian Nat. Univ., Canberra, ACT, Australia
fDate :
6/24/1905 12:00:00 AM
Abstract :
This paper reviews recent results on impurity free intermixing of GaAs/AlGaAs quantum wells and application of this technique for integration of optoelectronic devices. Silicon dioxide layers created by plasma enhanced chemical vapour deposition and spin on glass layers were used in this study to create interdiffusion. An integrated device of a laser and a waveguide has been demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; diffusion barriers; gallium arsenide; integrated optoelectronics; optical waveguides; plasma CVD; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs quantum wells; SiO2; enhanced chemical vapour deposition; impurity free intermixing; integrated laser/waveguide device; interdiffusion; optoelectronic device integration; quantum well intermixing; silicon dioxide layers; spin on glass layers; Chemical vapor deposition; Gallium arsenide; Glass; Impurities; Optoelectronic devices; Plasma applications; Plasma chemistry; Plasma devices; Plasma waves; Silicon compounds;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003193
