Title :
Recent developments in silicon optoelectronic devices
Author_Institution :
Dept. of Electron. Eng., City Univ., Kowloon, China
fDate :
6/24/1905 12:00:00 AM
Abstract :
Due to the rapid growth of the Internet and multi-media communication networks, there are urgent needs and tremendous commercial values in the development of optoelectronic integrated circuits (OEICs). This work reviews the recent developments and the prospect of silicon-based integrated optoelectronic circuits (Si-OEICs). The technological aspects of porous silicon and oxynitride devices for integrated optoelectronic applications are discussed. Some optoelectronic devices realized with these technologies are described. Recent achievements indicate that the present constraints for using Si-based materials in optoelectronics are mainly technological rather than physical. Once these technological difficulties are resolved, the realization and applications of Si-OEICs will grow rapidly.
Keywords :
elemental semiconductors; integrated circuit technology; integrated optoelectronics; optical communication equipment; porous semiconductors; silicon; Internet; OEIC; Si; Si-OEIC; Si-based materials constraints; SiON; multi-media communication networks; optoelectronic integrated circuits; oxynitride devices; porous silicon devices; silicon optoelectronic devices; silicon-based integrated optoelectronic circuits; technological constraints; Costs; IP networks; Integrated circuit technology; Luminescence; Optical fiber networks; Optical films; Optical materials; Optoelectronic devices; Semiconductor materials; Silicon compounds;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003194