DocumentCode :
1614290
Title :
Distributed class-F/inverse class-F circuit considering up to arbitrary harmonics with parasitics compensation
Author :
Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Univ. of Electro-Commun., Tokyo, Japan
fYear :
2011
Firstpage :
29
Lastpage :
32
Abstract :
Class-F and inverse class-F load circuits that can be treated up to arbitrary harmonics have been presented. The class-F and inverse class-F load circuits are designed so that influence of parasitic elements at a transistor is compensated. By using distributed circuit elements, the class-F and inverse class-F amplifier can operate at C-band. The design method mainly for the inverse class-F load circuit is described. Using ideal transmission line model, a designed inverse class-F considering up to the fifth order harmonics exhibits power added efficiency of about 80% in simulation.
Keywords :
microwave power amplifiers; microwave transistors; C-band; arbitrary harmonics; distributed circuit elements; distributed class-F circuit; inverse class-F amplifier; inverse class-F load circuits; microwave transistor; parasitic elements; HEMTs; Harmonic analysis; Impedance; Integrated circuit modeling; Load modeling; Power transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2011 IEEE MTT-S International
Conference_Location :
Uji, Kyoto
ISSN :
2157-362X
Print_ISBN :
978-1-61284-214-1
Type :
conf
DOI :
10.1109/IMWS.2011.5877084
Filename :
5877084
Link To Document :
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