Control of turn-on voltage in GaN Schottky barrier diode using Zr/Al/Mo/Au metal stack

Author

Tokuda, H. ; Watanabe, F. ; Syahiman, A. ; Kuzuhara, M. ; Fujiwara, T.

Author_Institution

Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan

fYear

2011

Firstpage

37

Lastpage

40

Abstract

A GaN Schottky diode using Zr/Al/Mo/Au metal stack for Schottky contact has been newly developed. Turn-on (V_on) and breakdown voltages (V_br) are controllable with varying the annealing temperature. The fabricated diode shows the values V_on, series resistance (R_s), capacitance (C₀), and V_br to be 0.42 V, 4.2 Ω, 1.0 pF, and 24 V, respectively. These values indicate that 85% conversion efficiency is expected at 5.8 GHz in the rectenna circuit.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; aluminium alloys; annealing; gallium compounds; gold alloys; molybdenum alloys; semiconductor device breakdown; wide band gap semiconductors; zirconium alloys; GaN; Schottky barrier diode; Zr-Al-Mo-Au; annealing temperature; breakdown voltages; capacitance; capacitance 1.0 pF; conversion efficiency; rectenna circuit; resistance 4.2 ohm; series resistance; turn-on voltage; voltage 0.42 V; voltage 24 V; Annealing; Gallium nitride; Gold; Rectennas; Schottky diodes; Temperature dependence; Conversion efficiency; Schottky barrier diode; gallium nitride; rectenna;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications (IMWS), 2011 IEEE MTT-S International

Conference_Location

Uji, Kyoto

ISSN

2157-362X

Print_ISBN

978-1-61284-214-1

Type

conf

DOI

10.1109/IMWS.2011.5877086

Filename

5877086