Title :
A charge-multiplication CMOS image sensor suitable for low-light-level imaging
Author :
Shimizu, Ryu ; Arimoto, Mamoru ; Nakashima, Hayato ; Misawa, Kaori ; Suzuki, Kazuhiro ; Ohno, Toshikazu ; Nose, Yugo ; Watanabe, Keisuke ; Ohyama, Tatsushi ; Tani, Kuniyuki
Author_Institution :
Sanyo Electr., Gifu, Japan
Abstract :
A highly sensitive CMOS image sensor suitable for low-light-level imaging is developed. A specified multiplication gain is accomplished and controlled using a reciprocal charge-transfer sequence within each pixel. From signal analysis of a 2-dimensional pixel array, it is confirmed that imaging ability in low light levels is increased, and that this image sensor makes previously less-visible objects visually perceptible. Having features from both a charge multiplier and a CMOS image sensor, it offers advantages such as high sensitivity, wide dynamic range, random access, and a global shutter.
Keywords :
CMOS image sensors; impact ionisation; 2D pixel array; charge multiplier; charge-multiplication CMOS image sensor; image pickup tube; impact ionization; low-light-level imaging; reciprocal charge-transfer sequence; CMOS image sensors; Charge carriers; Charge-coupled image sensors; Electron devices; Image converters; Image sensors; Impact ionization; Pixel; Signal to noise ratio; Solid state circuits;
Conference_Titel :
Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-3458-9
DOI :
10.1109/ISSCC.2009.4977302
