• DocumentCode
    1614447
  • Title

    Non-linear interaction of space charge waves in GaAs semiconductor

  • Author

    Grimalsky, V.V. ; Escobedo-Alatorre, J. ; Tecpoyotl-Torres, M. ; Koshevaya, S.V.

  • Author_Institution
    Instituto Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico
  • Volume
    1
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    327
  • Lastpage
    330
  • Abstract
    This report deals with the non-linear effects on space charge waves (with phase velocity equal to the electron drift velocity) in GaAs semiconductors. If an external electric field is applied, at the critical field value Ecrit, the mobility changes its sign and becomes negative, as a result, there are obtained nonlinear and linear instabilities of the interactions at fields E⩾Ecrit. Under these conditions, the electron velocity is a function of the electric field given by E=E0+E˜, where Eo is the constant part and E˜ is the variable part. The simulation of the nonlinear interaction of space charge waves in the GaAs semiconductor is made considering both the Maxwell´s equations and the velocity function
  • Keywords
    III-V semiconductors; Maxwell equations; carrier mobility; gallium arsenide; negative resistance; space charge waves; space-charge-limited conduction; GaAs; Maxwell equations; critical field value; external electric field; linear instabilities; mobility sign changes; negative mobility; nonlinear instabilities; nonlinear interaction; semiconductor; space charge waves; Batteries; Dielectrics; Electron mobility; Frequency; Gallium arsenide; Maxwell equations; Nonlinear equations; Semiconductor process modeling; Space charge; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2002. MIEL 2002. 23rd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-7235-2
  • Type

    conf

  • DOI
    10.1109/MIEL.2002.1003203
  • Filename
    1003203