DocumentCode
1614447
Title
Non-linear interaction of space charge waves in GaAs semiconductor
Author
Grimalsky, V.V. ; Escobedo-Alatorre, J. ; Tecpoyotl-Torres, M. ; Koshevaya, S.V.
Author_Institution
Instituto Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico
Volume
1
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
327
Lastpage
330
Abstract
This report deals with the non-linear effects on space charge waves (with phase velocity equal to the electron drift velocity) in GaAs semiconductors. If an external electric field is applied, at the critical field value Ecrit, the mobility changes its sign and becomes negative, as a result, there are obtained nonlinear and linear instabilities of the interactions at fields E⩾Ecrit. Under these conditions, the electron velocity is a function of the electric field given by E=E0+E˜, where Eo is the constant part and E˜ is the variable part. The simulation of the nonlinear interaction of space charge waves in the GaAs semiconductor is made considering both the Maxwell´s equations and the velocity function
Keywords
III-V semiconductors; Maxwell equations; carrier mobility; gallium arsenide; negative resistance; space charge waves; space-charge-limited conduction; GaAs; Maxwell equations; critical field value; external electric field; linear instabilities; mobility sign changes; negative mobility; nonlinear instabilities; nonlinear interaction; semiconductor; space charge waves; Batteries; Dielectrics; Electron mobility; Frequency; Gallium arsenide; Maxwell equations; Nonlinear equations; Semiconductor process modeling; Space charge; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-7235-2
Type
conf
DOI
10.1109/MIEL.2002.1003203
Filename
1003203
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