Title :
Theoretical analysis of room temperature InAs0.89Sb0.11 mid-infrared (MIR) photodetector for CO detection
Author :
Chakrabarti, P. ; Lal, R.K. ; Jain, Manish ; Gupta, Sachin
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
fDate :
6/24/1905 12:00:00 AM
Abstract :
A complete theoretical model of a mid-infrared double heterostructure photodetector has been developed. The model is physics based one and takes into account all the dominant mechanisms that shape the characteristics of room temperature MIR detectors. In this paper the detectivity, V-I characteristics and photo-response of an InAs0.55Sb0.15P0.30/InAs0.89Sb0.11/InAs0.55Sb0.15P0.30 double heterostructure mid-infrared photodetector have been analyzed. This photodetector has an extended spectral response (2.5 μm to 5.0 μm) as compared to other currently available III-V room temperature detectors. The maximum detectivity of 1.18×107 mHz12/ W-1 and responsivity of 0.83 A/W are obtained near cut-off wavelength at 5 μm. This device could be used as an optical sensor for the environmental monitoring of carbon monoxide.
Keywords :
III-V semiconductors; gas sensors; indium compounds; infrared detectors; optical sensors; photodetectors; 2.5 to 5.0 micron; CO; CO detection; III-V detectors; InAs0.55Sb0.15P0.30-InAs0.89Sb0.11InAs0.55Sb0.15P0.30; InAs0.55Sb0.15P0.30/InAs0.89Sb0.11/InAs0.55Sb0.15P0.30; V-I characteristics; detectivity; dominant mechanisms; double heterostructure photodetector; environmental monitoring; extended spectral response; gas sensor; mid-infrared photodetector; optical sensor; photo-response; physics based model; responsivity; Conducting materials; Electron traps; Face detection; Gas detectors; Monitoring; Optical sensors; Optical surface waves; Photodetectors; Photodiodes; Temperature sensors;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003204
