DocumentCode
1614493
Title
Hot carrier degradation in LDMOS power transistors
Author
Cheng, Chih-Chang ; Wu, J.W. ; Lee, C.C. ; Shao, J.H. ; Wang, T.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
fYear
2004
Firstpage
283
Lastpage
286
Abstract
The hot carrier performance of N-LDMOS and P-LDMOS transistors is evaluated. For N-LDMOS transistors, the drain current degradation is shown to be due to hot electron injection in the drift region field oxide (bird´s beak edge). On the other hand, the hot carrier-damaged region of P-LDMOS transistors is within the channel region, and hot electron is also the source of degradation.
Keywords
hot carriers; impact ionisation; power MOSFET; semiconductor device reliability; LDMOS power transistors; N-LDMOS transistors; P-LDMOS transistors; bird´s beak edge; drain current degradation; drift region field oxide; hot carrier degradation; hot carrier reliability; hot carrier stress; hot carrier-damaged channel region; hot electron injection; impact ionization; CMOS technology; Degradation; Electron traps; Hot carriers; Impact ionization; Power transistors; Secondary generated hot electron injection; Semiconductor optical amplifiers; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN
0-7803-8454-7
Type
conf
DOI
10.1109/IPFA.2004.1345626
Filename
1345626
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