Title :
Hot carrier degradation in LDMOS power transistors
Author :
Cheng, Chih-Chang ; Wu, J.W. ; Lee, C.C. ; Shao, J.H. ; Wang, T.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
Abstract :
The hot carrier performance of N-LDMOS and P-LDMOS transistors is evaluated. For N-LDMOS transistors, the drain current degradation is shown to be due to hot electron injection in the drift region field oxide (bird´s beak edge). On the other hand, the hot carrier-damaged region of P-LDMOS transistors is within the channel region, and hot electron is also the source of degradation.
Keywords :
hot carriers; impact ionisation; power MOSFET; semiconductor device reliability; LDMOS power transistors; N-LDMOS transistors; P-LDMOS transistors; bird´s beak edge; drain current degradation; drift region field oxide; hot carrier degradation; hot carrier reliability; hot carrier stress; hot carrier-damaged channel region; hot electron injection; impact ionization; CMOS technology; Degradation; Electron traps; Hot carriers; Impact ionization; Power transistors; Secondary generated hot electron injection; Semiconductor optical amplifiers; Stress; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345626
