Title :
Study of photo-emission current impact on spectral characteristics of double barrier photo-receiving structure [NiSi-Si-TiSi2]
Author :
Khudaverdyan, Kh. ; Harutyunyan, H.
Author_Institution :
Dept. of Biomedicinal Devices & Microelectron., State Enginering Univ. of Armenia, Yerevan, Armenia
fDate :
6/24/1905 12:00:00 AM
Abstract :
The silicide-silicon-silicide type photoreceiving structures recrystallized by laser, currently studied differ efficiently from conventional photoreceivers in their multifunctional operation. In them, the photosensitivity can be controlled by the external voltage and the device can be used as a zero frequency gauge due to dependence of the photocurrent on the external voltage of the mark shift point. This work is the first to investigate the influence of the photoemission from the contact on the spectral characteristics of the afore-mentioned structures.
Keywords :
elemental semiconductors; metal-semiconductor-metal structures; nickel compounds; photodetectors; photoemission; recrystallisation; silicon; titanium compounds; NiSi-Si-TiSi2; double barrier photo-receiving structure; laser recrystallization; mark shift point; multifunctional operation; photoemission current; photosensitivity; silicide-silicon-silicide type structures; spectral characteristics; zero frequency gauge; Absorption; Charge carriers; Electrons; Frequency; Microelectronics; Optical reflection; Photoconductivity; Silicides; Silicon; Voltage control;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003206
