Title :
Understanding the NBTI degradation in halo-doped channel p-MOSFETs
Author :
Jha, Neeraj K. ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Abstract :
The role of initial interface damage for negative bias temperature instability (NBTI) degradation has been examined for short channel MOSFET devices. In this paper we present a detailed study of the role of initial silicon-oxide interface quality on the NBTI degradation. Hole density and oxide fields are important parameters responsible for NBTI degradation. Our results show that NBTI degradation is independent of initial interface quality.
Keywords :
MOSFET; doping profiles; hole density; interface structure; ion implantation; semiconductor device reliability; semiconductor device testing; semiconductor-insulator boundaries; thermal stability; NBTI degradation; SiO2-Si; halo-doped channel p-MOSFET; hole density; initial interface damage; initial silicon-oxide interface quality; negative bias temperature instability; oxide fields; short channel MOSFET; Annealing; CMOS technology; Degradation; Implants; Interface states; MOS devices; MOSFET circuits; Niobium compounds; Stress; Titanium compounds;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345639
