Title :
An interconnect technology for high density multichip systems
Author :
Jaafar, Maha A S ; Bajikar, Sateesh ; Denton, Denice D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
The authors describe an interconnect technology used for high density multichip systems. The process involves the electroplating of through-holes in silicon (Si) substrates. These metallized holes act as interconnects between the levels of a three-dimensional multichip system. This method has the advantages of minimizing both system area and the delay times between chips
Keywords :
VLSI; electroplating; metallisation; multichip modules; Si; VLSI; electroplating; high density multichip systems; interconnect technology; metallized holes; three-dimensional multichip system; through-holes; Bonding; Delay; Etching; Fabrication; Geometry; Integrated circuit interconnections; Materials science and technology; Metallization; Packaging; Silicon;
Conference_Titel :
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-0510-8
DOI :
10.1109/MWSCAS.1992.271045
