Title :
The effect of geometry in the characterization of barrier profile in vias by transmission electron microscopy
Author :
Chen, Li-Chien ; Lee, Tan-Chen ; Huang, Jui-Yen ; Su, David
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
Characterization of the profile and thickness of barrier layers in cylindrical vias by cross-sectional transmission electron microscopy (TEM) is crucial for understanding the behavior of Cu interconnects and is becoming a challenge for the 0.13 μm node and below. In this study, we demonstrate how the geometry of the TEM sample affects the contrast of the barrier layer and propose guidelines for TEM sample preparation and image interpretation.
Keywords :
chemical interdiffusion; diffusion barriers; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; specimen preparation; transmission electron microscopy; 0.13 micron; Cu; Cu interconnects; TEM image interpretation; TEM sample geometry; TEM sample preparation; barrier layer contrast; barrier layer thickness; cross-sectional TEM; cylindrical vias; failure analysis; transmission electron microscopy; via barrier profile; Condition monitoring; Electron beams; Failure analysis; Geometry; Guidelines; Integrated circuit interconnections; Manufacturing industries; Semiconductor device manufacture; Thickness measurement; Transmission electron microscopy;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2004. IPFA 2004. Proceedings of the 11th International Symposium on the
Print_ISBN :
0-7803-8454-7
DOI :
10.1109/IPFA.2004.1345644
