CMOS circuit techniques for millimeter-wave voltage-controlled oscillator and injection-locked frequency divider

Author

Chen, Huan-Sheng ; Hsieh, Hsieh-Hung ; Lu, Chung-Ting ; Lu, Liang-Hung

Author_Institution

Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2011

Firstpage

1538

Lastpage

1541

Abstract

Fabricated in a standard 0.18-μm CMOS process, a voltage-controlled oscillator (VCO) and a injection-locked frequency divider (ILFD) operating in the vicinity of 50 GHz is presented in this paper. By employing a parallel combination of transmission lines for the LC-tank, the phase noise of the VCO can be effectively reduced while maintaining better frequency accuracy and tuning range. Measurement indicates a phase noise of -97 dBc/Hz at 1-MHz offset for the 54-GHz VCO. With the multiple injection technique, an enhanced locking range of the 50-GHz IFLD is demonstrated.

Keywords

CMOS integrated circuits; frequency dividers; injection locked oscillators; phase noise; voltage-controlled oscillators; CMOS circuit technique; ILFD; LC-tank; VCO; frequency 1 MHz; frequency 50 GHz; frequency 54 GHz; injection-locked frequency divider; locking range; millimeter-wave voltage-controlled oscillator; parallel combination; phase noise; size 0.18 micron; transmission lines; CMOS integrated circuits; Frequency conversion; Phase noise; Power transmission lines; Ring oscillators; Voltage-controlled oscillators; Injection-locked frequency divider; VCO; locking range; low phase noise; low power; millimeter wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2011 Asia-Pacific

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4577-2034-5

Type

conf

Filename

6174057