Title :
Modeling the Coupling through Substrate for Frequencies up to 100GHz
Author :
Gerakis, Vasileios ; Christos, Fontounasios ; Hatzopoulos, Alkis
Author_Institution :
Dept. of Electr. & Comput. Eng., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Abstract :
A study on the coupling through substrate using the case of two square metal pads over bulk silicon substrate with epitaxial layer is presented. A lightly doped profile is adopted and it is simulated by means of an electromagnetic simulator for various pad distances and different metal layers, assuming a 65 nm bulk CMOS technology. Suggestions how to reduce the simulation time when a large number of isolation layers is involved are also provided. Furthermore, the increase of isolation (resulting in reduction of the noise coupling) between the pads by using proper metal guard rings is also analyzed and the impact of various guard ring design (geometrical) parameters is examined. S parameters are used to compare the various structures. A substrate circuit-model is proposed and evaluated for frequencies above 30 GHz.
Keywords :
CMOS integrated circuits; S-parameters; coupled circuits; doping profiles; elemental semiconductors; integrated circuit modelling; semiconductor epitaxial layers; silicon; S parameters; Si; bulk CMOS technology; bulk silicon substrate; circuit model; coupling through substrate; electromagnetic simulator; epitaxial layer; isolation layers; lightly doped profile; metal guard rings; metal layers; noise coupling; size 65 nm; square metal pads; Capacitance; Conductivity; Couplings; Integrated circuit modeling; Metals; Noise; Substrates; Guard ring; Metal pad coupling; Substrate noise;
Conference_Titel :
Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2015 IEEE 18th International Symposium on
Conference_Location :
Belgrade
Print_ISBN :
978-1-4799-6779-7
DOI :
10.1109/DDECS.2015.25
