Modeling the Coupling through Substrate for Frequencies up to 100GHz

Author

Gerakis, Vasileios ; Christos, Fontounasios ; Hatzopoulos, Alkis

Author_Institution

Dept. of Electr. & Comput. Eng., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece

fYear

2015

Firstpage

165

Lastpage

168

Abstract

A study on the coupling through substrate using the case of two square metal pads over bulk silicon substrate with epitaxial layer is presented. A lightly doped profile is adopted and it is simulated by means of an electromagnetic simulator for various pad distances and different metal layers, assuming a 65 nm bulk CMOS technology. Suggestions how to reduce the simulation time when a large number of isolation layers is involved are also provided. Furthermore, the increase of isolation (resulting in reduction of the noise coupling) between the pads by using proper metal guard rings is also analyzed and the impact of various guard ring design (geometrical) parameters is examined. S parameters are used to compare the various structures. A substrate circuit-model is proposed and evaluated for frequencies above 30 GHz.

Keywords

CMOS integrated circuits; S-parameters; coupled circuits; doping profiles; elemental semiconductors; integrated circuit modelling; semiconductor epitaxial layers; silicon; S parameters; Si; bulk CMOS technology; bulk silicon substrate; circuit model; coupling through substrate; electromagnetic simulator; epitaxial layer; isolation layers; lightly doped profile; metal guard rings; metal layers; noise coupling; size 65 nm; square metal pads; Capacitance; Conductivity; Couplings; Integrated circuit modeling; Metals; Noise; Substrates; Guard ring; Metal pad coupling; Substrate noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Diagnostics of Electronic Circuits & Systems (DDECS), 2015 IEEE 18th International Symposium on

Conference_Location

Belgrade

Print_ISBN

978-1-4799-6779-7

Type

conf

DOI

10.1109/DDECS.2015.25

Filename

7195692