High efficiency GaN Class E power amplifier at 5.8GHz with harmonic control network

Author

Wenli Fu ; Shiwei Dong ; Chaoyue Yang ; Ying Wang ; Yazhou Dong

Author_Institution

China Acad. of Space Technol. (Xi´an), Xi´an, China

fYear

2014

fDate

8-9 May 2014

Firstpage

205

Lastpage

207

Abstract

This paper presents a 5.8GHz high efficiency class-E power amplifier (PA) using a 25-W GaN HEMT large signal model for wireless power transmission applications. The input and output harmonic control networks using λ/4 open-stub transmission lines is employed to obtain high output power and high efficiency. The simulation results show that the power-added efficiency (PAE) of 69% with a gain of 12.2dB and output power of 41.2dBm is achieved at 5.8GHz. The PAE over 63% and the output power over 40 dBm are maintained in 100 MHz bandwidth.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; inductive power transmission; microwave power amplifiers; transmission lines; wide band gap semiconductors; λ-4 open-stub transmission lines; GaN; HEMT large signal model; PA; PAE; bandwidth 100 MHz; efficiency 69 percent; frequency 5.8 GHz; gain 12.2 dB; high efficiency class-E power amplifier; input harmonic control networks; output harmonic control networks; power 25 W; power-added efficiency; wireless power transmission applications; Gallium nitride; HEMTs; Harmonic analysis; Microwave amplifiers; Microwave circuits; Power amplifiers; Power generation; GaN HEMT; class E power amplifier; power added efficiency (PAE);

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Power Transfer Conference (WPTC), 2014 IEEE

Conference_Location

Jeju

Type

conf

DOI

10.1109/WPT.2014.6839583

Filename

6839583