Title :
A 6 GHz-15 GHz 2 watts GaN MMIC
Author :
Yamada, Fumio ; Mizuno, Shinya ; Yamamoto, Hiroshi ; Sano, Seigo
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yamanashi, Japan
Abstract :
A wide-band GaN monolithic microwave integrated circuit (MMIC) has been developed for power amplifiers. Reactively matched techniques were employed for the design of our GaN MMIC. The MMIC consists of two-stage GaN high electron mobility transistors (HEMT). The gate periphery of driver and power GaN HEMTs is determined 0.5 mm and 1.0 mm, respectively. The developed GaN MMIC provides 2 watts output power over 6 GHz to 15 GHz with small signal gain of 12 dB. The results show the developed GaN MMIC has a capability of replacing GaAs MMICs.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; integrated circuit design; microwave field effect transistors; power HEMT; wide band gap semiconductors; GaN; frequency 6 GHz to 15 GHz; gain 12 dB; power 2 W; power HEMT; power amplifiers; power high electron mobility transistor; size 0.5 mm; size 1.0 mm; wideband MMIC; wideband monolithic microwave integrated circuit; Gallium arsenide; Gallium nitride; HEMTs; Impedance; Logic gates; MMICs; Power amplifiers; GaN HEMT; MMIC; wide-band;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
