Title :
C-Ku band ultra broadband GaN MMIC amplifier with 20W output power
Author :
Kuwata, Eigo ; Yamanaka, Koji ; Koyama, Hidetoshi ; Kamo, Yoshitaka ; Kirikoshi, Tasuku ; Nakayama, Masatoshi ; Hirano, Yoshihito
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Circuit (MMIC) high power amplifier (HPA), which features high power and high gain over C-Ku band 115 % relative bandwidth. A C-Ku band (6 ~ 18 GHz) GaN HEMT MMIC amplifier was manufactured and measured. The circuit dimension is 4.8 mm by 4 mm. The fabricated MMIC HPA derived an averaged output power of 20 W with averaged power gain of 9.6 dB over C-Ku band. The output power is state-of-the-art output power for GaN HEMT MMIC amplifiers with more than 100 % relative bandwidth and up to Ku band operation frequency.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium compounds; microwave field effect transistors; wide band gap semiconductors; wideband amplifiers; C-Ku band ultra broadband MMIC amplifier; GaN; HEMT MMIC amplifier; frequency 6 GHz to 18 GHz; gain 9.6 dB; high electron mobility transistor; high power amplifier; monolithic microwave integrated circuit; power 20 W; Broadband amplifiers; Distributed amplifiers; Gallium nitride; HEMTs; MMICs; Power amplifiers; Power generation; Broadband amplifiers; GaN HEMT; High power amplifiers; band width; microwave;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4577-2034-5
